1/2 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.01 - rev.b high-voltage amplifier transistor (120v, 50ma) 2sc4102 / 2sc3906k ? features ? dimensions (unit : mm) 1) high breakdown voltage. (bv ceo = 120v) 2) complements the 2sa1579 / 2sa1514k ? absolute maximum ratings (ta=25 ? c) parameter symbol v cbo v ceo v ebo i c p c tj tstg limits 120 120 5 50 0.2 150 ? 55 to + 150 unit v v v ma w c c collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature ? packaging specifications and h fe type 2sc3906k smt3 rs t ? t146 3000 2sc4102 umt3 rs t ? t106 3000 package h fe code marking basic ordering unit (pieces) ? denotes h fe ? electrical characteristics (ta=25 ? c) parameter symbol min. typ. max. unit conditions bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe f t cob 120 120 5 ? ? ? 180 ? ? ? ? ? ? ? ? ? 140 2.5 ? ? ? 0.5 0.5 0.5 560 ? ? v v v a a v ? mhz pf i c = 50 a i c = 1ma i e = 50 a v cb = 100v v eb = 4v i c /i b = 10ma/1ma v ce = 6v, i c = 2ma v ce = 12v, i e =? 2ma, f = 100mhz v cb = 12v, i e = 0a, f = 1mhz collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance rohm : smt3 eiaj : sc-59 jedec : sot-346 2sc3906k (1) emitter (2) base (3) collector rohm : umt3 eiaj : sc-70 jedec : sot-323 2sc4102 (1) emitter (2) base (3) collector 1.25 2.1 0.3 0.15 0~0.1 0.1min. ( 3 ) 0.9 0.7 0.2 0.65 ( 2 ) 2.0 1.3 ( 1 ) 0.65 each lead has same dimensions 0.8 0.15 0~0.1 0.3min. 1.1 ( 2 ) ( 1 ) 2.8 1.6 0.4 ( 3 ) 2.9 1.9 0.95 0.95 each lead has same dimensions
2/2 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.01 - rev.b data sheet 2sc4102 / 2sc3906k ? electrical characteristics curves collector current : i c (ma) collector to emitter voltage : v ce (v) fig.1 ground emitter output characteristics 2 4 6 8 10 4 8 12 16 20 0 i b = 0 a 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 ta = 25 c collector current : i c (ma) base to emitter voltage : v be (v) fig.2 ground emitter propagation characteristics 0 0.1 0.2 0.5 1 2 5 10 20 50 0.2 0.6 0.4 0.8 1.0 1.2 1.4 1.6 ta = 25 c v ce = 6v collector current : i c (ma) dc current gain : h fe fig.3 dc current gain vs. collector current 0.2 0.5 12 510 20 50 50 100 200 500 ta = 25 c v ce = 1v 3 v 5 v collector current : i c (ma) collector saturation voltage : v ce(sat) (v) fig.4 collector-emitter saturation voltage vs. collector current ( ) 12 510 20 50 0.02 0.05 0.1 0.2 0.5 ta = 25 c i c /i b = 50 10 20 collector current : i c (ma) collector saturation voltage : v ce(sat) (v) fig.5 collector-emitter saturation voltage vs. collector current ( ) 12 510 20 50 0.02 0.05 0.1 0.2 0.5 ta = 100 c 25 c ? 40 c i c /i b = 10 collector current : i e (ma) transition frequency : f t (mhz) fig.6 gain bandwidth product vs. emitter current ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 100 200 500 50 v ce = 6v ta = 25 c collector output capacitance : c ob (pf) fig.7 collector output capacitance vs. collector-base voltage ? 0.5 1 2 5 10 20 2 1 5 10 20 ta = 25 c f = 1mhz i e = 0a collector to base voltage : v cb (v) emitter input capacitance : c ib (pf) emitter to base voltage : v eb (v) fig.8 emitter input capacitance vs. emitter-base voltage ? 0.5 1 2 5 10 20 2 1 5 10 20 ta = 25 c f = 1mhz i c = 0a
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